Defect Tolerance After the Roadmap
نویسندگان
چکیده
Optical photolithography techniques are approaching physical and economic limits that will drastically reduce the current scaling rate of device miniaturization. New technologies being investigated include Next Generation Lithography (NGL) and Chemically Assembled Electronic Nanotechnology (CAEN), which hold the promise of extremely high densities and sub-10nm feature sizes. However, these technologies are likely to have significantly higher defect densities than current ones. This is especially true for CAEN-based devices: we expect the very nature of chemical fabrication to result in defect densities of as much as 10%. Such high defect densities require a completely new approach to manufacturing computational devices: since every chip is expected to have multiple defects, it will no longer be possible to test them and throw defective ones away. Instead, we will have to devise a way to use defective chips.
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تاریخ انتشار 2003